2SC1623 (400-600)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR (NPN) FEATURES z High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA z High voltage:VCEO=50V 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Test conditions Parameter Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=6V,IC=1mA 90 200 600 Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA,IB=10mA 1 V fT Transition frequency VCE=6V,IC=10mA 250 MHz CLASSIFICATION OF hFE Rank Range Marking L4 L5 L6 L7 90-180 135-270 200-400 300-600 L4 L5 L6 L7 B,Jun,2012 Typical Characteristics 2SC1623 Static Characteristic 4 COMMON EMITTER Ta=25℃ 10uA 3 IC 8uA 6uA 5uA 4uA 3uA 1 IC Ta=25℃ DC CURRENT GAIN 7uA 2 —— Ta=100℃ hFE (mA) 9uA COLLECTOR CURRENT hFE 1000 100 2uA COMMON EMITTER VCE= 6V IB=1uA 0 0 2 4 6 COLLECTOR-EMITTER VOLTAGE VBEsat —— Ta=25℃ Ta=100 ℃ 10 COLLECTOR CURREMT IC IC Ta=100 ℃ Ta=25℃ IC β=10 10 0.1 100 1 10 COLLECTOR CURREMT (mA) VBE fT 1000 —— IC 100 (mA) IC T =2 5℃ a TRANSITION FREQUENCY 10 T =1 00℃ a COLLECTOR CURRENT IC fT (mA) (MHz) —— 100 (mA) 100 β=10 1 100 —— 10 IC 300 1000 100 0.1 1 COLLECTOR CURRENT VCEsat IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 2000 10 0.1 8 VCE (V) 1 COMMON EMITTER VCE=6V 0.1 0.0 0.3 0.6 0.9 100 COMMON EMITTER VCE=6V Ta=25℃ 10 1.2 1 50 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) 10 Cib C (pF) Ta=25 ℃ CAPACITANCE PC 250 f=1MHz IE=0/IC=0 Cob 1 0.1 0.1 70 10 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (V) —— IC (mA) Ta 200 150 100 50 0 1 REVERSE VOLTAGE 10 V (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) B,Jun,2012